Gate-oxide thickness dependence of hot-carrier-induced degradation in buried p-MOSFETs

The gate-oxide thickness dependence of the hot-carrier-induced degradation in the buried p-MOSFET is described. The results reveal that the thin gate oxide provides high hot-carrier resistance in the buried p-MOSFET even with high hot-electron generation. This effect is induced by significantly different mechanisms from that in the n-MOSFET. It is found that the device degradation is characterized by the dynamics of the electron heating process during stress and the corresponding position of the trapped electrons. The degradation strongly depends on the gate-oxide thickness of the buried p-MOSFET.<>