Roles of oxide trapped charge and generated interface states on GIDL under hot-carrier stressing

Author

Lo, G.-Q. ; Kwong, D.-L.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

557

Lastpage

560

Abstract

The effects of hot-carrier-induced oxide electron trapped charge ( Delta N/sub et/) and generated interface state ( Delta D/sub it/) on the gate-induced drain leakage (GIDL) current in n-channel MOSFETs with thin gate oxides ( approximately 86 AA) have been studied and established. The dependence of GIDL degradation characteristics on hot-carrier stress conditions and stress time, and the damage recovery behavior of GIDL have been extensively characterized. It is found that Delta N/sub et/ rather than Delta D/sub it/ is the primary factor responsible for GIDL degradation at high V/sub d/ regions. However, Delta D/sub it/ significantly enhances GIDL at low V/sub d/ regions (>

Keywords

electron traps; hot carriers; insulated gate field effect transistors; interface electron states; reliability; GIDL; damage recovery behavior; drain leakage conduction; gate-induced drain leakage; generated interface states; hot-carrier stress conditions; hot-carrier stressing; n-channel MOSFETs; oxide trapped charge; Degradation; Electron traps; Hot carrier effects; Hot carriers; Interface states; MOSFETs; Stress; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237137

Filename

237137