DocumentCode
3318028
Title
Self consistent parameterized physical MTJ compact model for STT-RAM
Author
Nigam, Anurag ; Munira, Kamaram ; Ghosh, Avik ; Wolf, Stu ; Chen, Eugene ; Stan, Mircea R.
Author_Institution
Charles L. Brown ECE Dept., Univ. of Virginia, Charlottesville, VA, USA
Volume
02
fYear
2010
fDate
11-13 Oct. 2010
Firstpage
423
Lastpage
426
Abstract
We present a physical compact model for magnetic tunnel junction (MTJ). Landau-Lifshitz-Gilbert (LLG) differential equation is solved in SPICE to derive the transient characteristics of MTJ. A modified version of the Simmons tunnel current equation captures the steady state properties of MTJ. The model results are validated with published experimental data.
Keywords
SPICE; differential equations; magnetic tunnelling; random-access storage; Landau-Lifshitz-Gilbert differential equation; SPICE; STT-RAM; Self consistent model; Simmons tunnel current equation; magnetic tunnel junction; parameterized physical MTJ compact model; steady state properties; transient characteristics; Equations; Frequency modulation; Integrated circuit modeling; Magnetic tunneling; Mathematical model; Probability; Transient analysis; Compact circuit model; MTJ; STT-RAM;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2010 International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4244-5783-0
Type
conf
DOI
10.1109/SMICND.2010.5650558
Filename
5650558
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