Title :
A novel DC measurement method for the accurate extraction of bipolar resistive parasitics
Author :
Taft, R.C. ; Plummer, J.D.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
A novel DC method for determining the components of series resistance in bipolar transistors is presented. As a DC technique, it shows unprecedented accuracy as demonstrated by its application to both metal-contacted heterojunction transistors and more conventional bipolar junction transistors. The measurement error was minimized by using a single double-base Kelvin-tapped transistor to extract all components of series resistance. The present work indicates that past methods for calculating the bias dependence of series resistances in bipolar devices are incorrect. Therefore, a correct expression for the bias-dependent intrinsic base resistance is also presented.<>
Keywords :
bipolar transistors; electric resistance measurement; semiconductor device testing; DC measurement method; bias dependence; bipolar junction transistors; bipolar resistive parasitics; bipolar transistors; double-base Kelvin-tapped transistor; intrinsic base resistance; measurement error; metal-contacted heterojunction transistors; series resistance; Bipolar transistors; Electrical resistance measurement; Heterojunction bipolar transistors; Measurement errors;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237155
