Simulation, design, and fabrication of thin-film resistive-gate GaAs charge coupled devices

Computer simulation of high-speed-gallium-arsenide charge coupled devices (CCDs) is performed using an established two-dimensional semiconductor device simulation program. The effect of active layer thickness on the charge transfer efficiency (CTE) and the dynamic range is investigated using different active layers. Also, different gate architectures are compared for optimum dynamic range and compatibility with GaAs MESFET technology. Both capacitive gate CCD and resistive gate CCD are considered. It is shown that both dynamic range and, to a greater extent, CTE, decrease with decreasing active layer thickness. In general, thicker active layer CCDs have a higher dynamic range and faster operating frequencies.<>