Examination of thin porous layers and heteroepitaxial structures containing an underlayer of porous silicon

At present, multilayer heteroepitaxial compositions with latent layers of porous silicon are prospective semiconductor structures. This is caused by the opportunity of their use to damp pliable substrates for making multilayer structures with methods of molecular-beam epitaxy (MBE), and for creating radiating p-n transitions. The present paper is devoted to an examination of properties of this material and structures obtained with MBE methods with the aid of ellipsometric measurement of porosity. These methods allows us to obtain allocation of pores on the sizes together with general porosity, and also to explore the adsorption and optical properties of the material