Title :
High-speed, high-reliability superlattice avalanche photodiodes
Author_Institution :
Optoelectron. & High-Frequency Device Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
High-speed and high-reliability planar-structure InAlAs-InAlGaAs superlattice avalanche photodiodes (APDs) were realized for the first time. The obtained characteristics are suitable far practical 10-Gbps high sensitivity optical receivers
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; dark conductivity; gallium arsenide; high-speed optical techniques; indium compounds; optical receivers; semiconductor device reliability; semiconductor superlattices; sensitivity; 10 Gbit/s; Gbps high sensitivity optical receivers; InAlAs-InAlGaAs; high-speed high-reliability superlattice avalanche photodiodes; planar-structure; Absorption; Aging; Avalanche photodiodes; Dark current; Dynamic range; Etching; Indium phosphide; Optical receivers; Photoconductivity; Superlattices;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737742
