Title :
Modeling advanced bipolar devices for high performance applications
Author_Institution :
IBM, Hopewell Junction, NY, USA
Abstract :
A bipolar modeling methodology is described which uses a series of 2-D process and device simulation programs and a circuit model generation program each linked together in order to generate equivalent circuit models for numerical circuit simulation. The programs have been used to study process windows and device sensitivities, optimize process and device technology, and generate models for circuit design for IBMs advanced bipolar technology development. The methodology is described using examples of a Si-SiGe n-p-n HBT (heterojunction bipolar transistor) and an integrated VPNP structure. Efforts under development for future bipolar device modeling requirements are briefly described.<>
Keywords :
bipolar integrated circuits; bipolar transistors; electronic engineering computing; equivalent circuits; heterojunction bipolar transistors; semiconductor device models; 2D simulation programs; HBT; Si-SiGe; advanced bipolar devices; circuit model generation program; device simulation; equivalent circuit models; heterojunction bipolar transistor; high performance applications; integrated VPNP structure; modeling methodology; n-p-n; numerical circuit simulation; process simulation; Circuit simulation; Circuit synthesis; Design optimization; Equivalent circuits; Heterojunction bipolar transistors; Integrated circuit technology; Numerical models;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237199
