CMOS distributed amplifiers for UWB radar

Author

Maland, Kenneth ; Kjelgard, Kristian Gjertsen ; Lande, Tor Sverre

Author_Institution

Dept. of Inf., Univ. of Oslo, Oslo, Norway

fYear

2015

fDate

24-27 May 2015

Firstpage

1298

Lastpage

1301

Abstract

Ultra wideband radar implementations for millimeter-/microwave operation are emerging in CMOS requiring high bandwidth. A distributed amplifier (DA) topology for use as low-noise amplifier (LNA) in nanometer CMOS, is explored in this paper. Important modifications like direct termination is beneficial both in area and gain linearity. A 5-stage amplifier provides a -3dB bandwidth of 36.5GHz and a S₂₁ of 10.7dB ± 1.5dB in the passband, while consuming 24mA from a 1.2V supply and occupying an area of 0.67mm². A 3-stage amplifier provides a -3dB bandwidth of 39GHz and a S₂₁ of 8.8dB ± 2dB in the passband, while consuming 16mA from a 1.2V supply and occupying an area of 0.41mm². Reported results are surprisingly good, indicating DA architectures are giving sufficient performance for wideband applications like chirped radars even with limited supply voltage.

Keywords

CMOS integrated circuits; distributed amplifiers; low noise amplifiers; ultra wideband radar; CMOS distributed amplifiers; UWB radar; bandwidth 36.5 GHz; bandwidth 39 GHz; current 16 mA; current 24 mA; distributed amplifier topology; low-noise amplifier; nanometer CMOS; ultra wideband radar; voltage 1.2 V; Bandwidth; CMOS integrated circuits; Delays; Gain; Inductors; Noise; Q-factor;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2015 IEEE International Symposium on

Conference_Location

Lisbon

Type

conf

DOI

10.1109/ISCAS.2015.7168879

Filename

7168879