Strained layer quantum well heterostructure lasers

The metallurgical aspects of critical thickness in strained layer heterostructure systems, the effects of strain and quantum size effect on emission wavelength, and optical gain and threshold current density considerations associated with strained layer lasers are examined. The characteristics of broad area lasers under conditions of varying quantum well composition, thickness with respect to the critical thickness, growth conditions, stripe width, and other structural parameters are considered. More complicated InGaAs-GaAs strained layer quantum well heterostructure lasers, such as index guided laser structures, are also described. In contrast to GaAs quantum well heterostructure lasers, an antiguide is formed by strong free carrier effects in narrow oxide stripe InGaAs-GaAs strained layer lasers. This effect can be utilized in, laser arrays.<>