DocumentCode
3318879
Title
Charge loss in EPROM due to ion generation and transport in interlevel dielectric
Author
Crisenza, G. ; Ghidini, G. ; Manzini, S. ; Modelli, A. ; Tosi, M.
Author_Institution
SGS-Thomson Microelectron., Agrate Brianza, Italy
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
107
Lastpage
110
Abstract
A new charge loss mechanism in EPROMs implying generation of mobile ions in the bulk of the interlevel dielectric is proposed. Mobile ions generated in the intermediate dielectric screen the negative charge stored into the floating gate. Charge release is a field-assisted thermally activated mechanism. The phosphorus content of the interlevel dielectric seems to increase the activation energy of the phenomenon. Experiments designed to directly evaluate interlevel dielectric ion generation have been performed. Finally, the impact of this new data loss effect on the scaling down of the EPROM cell has been evaluated.<>
Keywords
EPROM; integrated memory circuits; ion mobility; ionic conduction in solids; EPROMs; activation energy; charge loss mechanism; data loss effect; field-assisted thermally activated mechanism; floating gate; interlevel dielectric; ion generation; negative charge; scaling down; Dielectric losses; EPROM; Performance evaluation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237215
Filename
237215
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