• DocumentCode
    3318879
  • Title

    Charge loss in EPROM due to ion generation and transport in interlevel dielectric

  • Author

    Crisenza, G. ; Ghidini, G. ; Manzini, S. ; Modelli, A. ; Tosi, M.

  • Author_Institution
    SGS-Thomson Microelectron., Agrate Brianza, Italy
  • fYear
    1990
  • fDate
    9-12 Dec. 1990
  • Firstpage
    107
  • Lastpage
    110
  • Abstract
    A new charge loss mechanism in EPROMs implying generation of mobile ions in the bulk of the interlevel dielectric is proposed. Mobile ions generated in the intermediate dielectric screen the negative charge stored into the floating gate. Charge release is a field-assisted thermally activated mechanism. The phosphorus content of the interlevel dielectric seems to increase the activation energy of the phenomenon. Experiments designed to directly evaluate interlevel dielectric ion generation have been performed. Finally, the impact of this new data loss effect on the scaling down of the EPROM cell has been evaluated.<>
  • Keywords
    EPROM; integrated memory circuits; ion mobility; ionic conduction in solids; EPROMs; activation energy; charge loss mechanism; data loss effect; field-assisted thermally activated mechanism; floating gate; interlevel dielectric; ion generation; negative charge; scaling down; Dielectric losses; EPROM; Performance evaluation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1990.237215
  • Filename
    237215