A new charge pumping method for determining the spatial interface state density distribution in MOSFETs

Author

Li, X.M. ; Deen, M.J.

Author_Institution

Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

85

Lastpage

87

Abstract

A novel charge pumping technique is proposed for measuring the spatial distribution of interface state density N/sub it/ in MOSFETs. Instead of connecting the source and the drain together as is usually done, different reverse bias voltages are applied to the source and the drain separately. The method makes it possible to measure the distribution of N/sub it/ without making any assumptions about it. With this method, one can determine N/sub it/ distribution near the source and the drain of the channel independently. Results show that the interface state distribution of a virgin MOSFET is not constant along the channel.<>

Keywords

electronic density of states; insulated gate field effect transistors; interface electron states; MOSFETs; charge pumping method; drain; reverse bias voltages; source; spatial interface state density distribution; Charge measurement; Charge pumps; Current measurement; Density measurement; Interface states; Joining processes; MOSFETs; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237220

Filename

237220