DocumentCode
3319099
Title
VLSI multilevel micro-coaxial interconnects for high speed devices
Author
Thomas, M.E. ; Saadat, I.A. ; Sekigahama, S.
Author_Institution
Nat. Semicond. Corp., Santa Clara, CA, USA
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
55
Lastpage
58
Abstract
A novel interconnect scheme is presented which allows the fabrication of microwave microcoaxial interconnect (M/sup 2/CI) structures. This technology offers full compatibility with existing VLSI processes, tailor matching of characteristic impedance, and crosstalk-free interconnects. The present status of this technology is reviewed. It is noted that the implementation of this technique should substantially improve the present speed limitation imposed by multilevel wiring and open a new performance window for high-density VLSI devices.<>
Keywords
MMIC; VLSI; metallisation; M/sup 2/CI; characteristic impedance; crosstalk-free interconnects; high-density VLSI devices; interconnect scheme; microwave microcoaxial interconnect; multilevel micro-coaxial interconnects; performance window; speed limitation; tailor matching; Crosstalk; Fabrication; Impedance; Microwave devices; Very large scale integration; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237227
Filename
237227
Link To Document