Tailoring of semiconductors for ultrafast device applications

Author

Smith, P.W.E.

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

200

Abstract

I present a summary of my work on developing and characterizing semiconductor materials with greatly-reduced carrier lifetimes, and describe some preliminary demonstrations of ultrafast switching devices based on these materials. Recently, we have shown that low-temperature MBE-grown GaAs shows great promise for use in ultrafast all optical devices, and we have observed in this material the largest nonlinear optical effects ever seen with picosecond response. We have conducted a detailed study of the dynamics of the nonlinear optical properties of this material as a function of wavelength, optical power, and material parameters

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; molecular beam epitaxial growth; nonlinear optics; optical communication equipment; optical elements; optical materials; GaAs; greatly-reduced carrier lifetimes; largest nonlinear optical effects; low-temperature MBE-grown GaAs; nonlinear optical properties dynamics; optical material parameters; optical power; picosecond response; semiconductors; ultrafast all optical devices; ultrafast device applications; wavelength; Gallium arsenide; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical materials; Optical pumping; Optical refraction; Optical variables control; Semiconductor materials; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737798

Filename

737798