Title :
Photorefractive multiple quantum wells for high-speed spatial light modulator applications
Author_Institution :
Thayer Sch. of Eng., Dartmouth Coll., Hanover, NH, USA
Abstract :
A simple analytical model to explain the spatial resolution of photorefractive MQW devices in terms of lateral drift of carriers has been developed and compared to a wide variety of experimental results. It appears that some low temperature grown (LTG) MQW experimental devices have reached their theoretical resolution limit of 4 μm, but at the expense of increased sensitivity has been achieved by using undoped MQW (to promote longitudinal carrier screening) and distributing LTG trapping layers at several planes along the growth direction (to reduce lateral drift). These devices have achieved their theoretical resolution with increased sensitivity; models for their performance agree with experimental results
Keywords :
carrier mobility; optical resolving power; photorefractive materials; semiconductor device models; semiconductor quantum wells; spatial light modulators; MQW experimental devices; analytical model; distributing LTG trapping layers; growth direction; high-speed spatial light modulator applications; increased sensitivity; lateral carrier drift; longitudinal carrier screening; low temperature grown; photorefractive MQW devices; photorefractive multiple quantum wells; spatial resolution; theoretical resolution; theoretical resolution limit; undoped MQW; Absorption; Diffraction; Geometry; Optical modulation; Photorefractive effect; Potential well; Quantum well devices; Refractive index; Spatial resolution; Stark effect;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737801