Title :
SiGe-base heterojunction bipolar transistors: physics and design issues
Author :
Patton, G.L. ; Stork, J.M.C. ; Comfort, J.H. ; Crabbe ; Meyerson, B.S. ; Harame, D.L. ; Sun, J.Y.-C.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
It has been shown that SiGe technology has the capability to extend the performance of Si bipolar transistors at both high and low current levels. The ability to tailor the bandgap, independently of the doping profile design, provides considerable flexibility for optimizing cutoff frequency, intrinsic base resistance, and junction capacitances for a given application. It is concluded that, when combined with a self-aligned process, SiGe can significantly improve the speed of Si bipolar circuits.<>
Keywords :
Ge-Si alloys; doping profiles; heterojunction bipolar transistors; semiconductor materials; Si bipolar circuits; SiGe technology; bandgap; current levels; cutoff frequency; doping profile design; heterojunction bipolar transistors; intrinsic base resistance; junction capacitances; self-aligned process; Bipolar transistors; Capacitance; Cutoff frequency; Design optimization; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Physics; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237237
