A Ku-band CMOS low-noise amplifier

Author

Deng, Kuo-Liang ; Tsai, Ming-Da ; Lin, Chin-Shen ; Lin, Kun-You ; Huei Wang ; Wang, S.H. ; Lien, W.Y. ; Chem, G.J.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2005

fDate

Nov. 30 2005-Dec. 2 2005

Firstpage

183

Lastpage

186

Abstract

A Ku-band monolithic low-noise amplifier is presented in this paper. This LNA fabricated in commercial 0.18-/spl mu/m CMOS technology is a two-stage common-source design instead of cascode configuration for lower noise performance. This CMOS LNA demonstrates a gain of better than 10 dB and a NF of better than 3.2 dB from 14 to 15 GHz. The measured output P/sub 1dB/ is about 5.2 dBm and input IP3 is 1.6 dBm. The chip size including all testing pads is 0.88 /spl times/ 0.77 mm/sup 2/.

Keywords

CMOS integrated circuits; low noise amplifiers; microwave amplifiers; 14 to 15 GHz; Ku-band CMOS low-noise amplifier; LNA; cascode configuration; monolithic low-noise amplifier; stage common-source design; CMOS technology; Gallium arsenide; Inductors; Low-noise amplifiers; MMICs; Noise measurement; Performance gain; Radio frequency; Semiconductor device measurement; Topology; CMOS; Ku band; RFIC; low-noise amplifiers; microwave;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, 2005. Proceedings. 2005 IEEE International Workshop on

Conference_Location

Singapore

Print_ISBN

0-7803-9372-4

Type

conf

DOI

10.1109/RFIT.2005.1598906

Filename

1598906