An integrated dual-band SiGe HBT low noise amplifier

Author

Huang, Chen-Yang ; Hsin, Yue-Ming

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan

fYear

2005

fDate

30 Nov.-2 Dec. 2005

Firstpage

187

Lastpage

190

Abstract

A common-base cascade dual-band low noise amplifier (LNA) for 2.4 and 5.8 GHz is presented in this paper. The LNA design is based on SiGe HBT (TSMC 0.35 μm BiCMOS) technology. At 2.4 GHz, the LNA performs a noise figure of 4.3 dB, associated gain of 11.1 dB, IIP3 of -4.4 dBm, and OIP3 of 5.3 dBm. At 5.8 GHz, the LNA performs a noise figure of 5.4 dB, associated gain of 5.11 dB, IIP3 of 3.7 dBm, and OIP3 of 7.3 dBm. The dc power consumption is 8.4 mW and the chip size is 0.86 × 0.58 mm².

Keywords

BiCMOS integrated circuits; germanium alloys; heterojunction bipolar transistors; low noise amplifiers; microwave amplifiers; silicon alloys; 11.1 dB; 2.4 to 5.8 GHz; 4.3 dB; 5.11 dB; 5.4 dB; BiCMOS; common-base cascade dual-band LNA; dc power consumption; integrated dual-band HBT low noise amplifier; BiCMOS integrated circuits; Dual band; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Low-noise amplifiers; Silicon germanium; Transceivers; Wireless LAN; Dual-Band; HBT; LNA; Low Noise Amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, 2005. Proceedings. 2005 IEEE International Workshop on

Print_ISBN

0-7803-9372-4

Type

conf

DOI

10.1109/RFIT.2005.1598907

Filename

1598907