Title :
Thermoluminescence in GaAs
Author :
Dao, L.V. ; Kraft, E. ; Gal, M. ; Fu, L. ; Jagadish, C.
Author_Institution :
Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia
Abstract :
We have studied the temperature dependence of the luminescence of ion implanted GaAs between 10 K and 100 K. We found that in certain temperature ranges the luminescence increases with increasing temperature. We attribute these isolated increases in the luminescence intensity to the thermal excitation of carriers out of traps, that is to thermoluminescence. Model calculations which include thermally stimulated luminescence produce excellent agreement with the experimental data
Keywords :
gallium arsenide; ion implantation; semiconductor doping; thermoluminescence; 10 to 100 K; GaAs; ion implanted GaAs; luminescence intensity; model calculations; temperature dependence; thermal excitation; thermally stimulated luminescence; thermoluminescence; Annealing; Charge carrier processes; Gallium arsenide; Insulation; Luminescence; Photoluminescence; Photonic band gap; Physics; Temperature dependence; Temperature distribution;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939215
