DocumentCode
3319767
Title
Thermoluminescence in GaAs
Author
Dao, L.V. ; Kraft, E. ; Gal, M. ; Fu, L. ; Jagadish, C.
Author_Institution
Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia
fYear
2000
fDate
2000
Firstpage
141
Lastpage
144
Abstract
We have studied the temperature dependence of the luminescence of ion implanted GaAs between 10 K and 100 K. We found that in certain temperature ranges the luminescence increases with increasing temperature. We attribute these isolated increases in the luminescence intensity to the thermal excitation of carriers out of traps, that is to thermoluminescence. Model calculations which include thermally stimulated luminescence produce excellent agreement with the experimental data
Keywords
gallium arsenide; ion implantation; semiconductor doping; thermoluminescence; 10 to 100 K; GaAs; ion implanted GaAs; luminescence intensity; model calculations; temperature dependence; thermal excitation; thermally stimulated luminescence; thermoluminescence; Annealing; Charge carrier processes; Gallium arsenide; Insulation; Luminescence; Photoluminescence; Photonic band gap; Physics; Temperature dependence; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location
Canberra, ACT
Print_ISBN
0-7803-5814-7
Type
conf
DOI
10.1109/SIM.2000.939215
Filename
939215
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