Self-assembled InAs quantum wires on InP(001)

Author

Wu, J. ; Zeng, Y.P. ; Sun, Z.Z. ; Lin, E. ; Xu, B. ; Wang, Z.G.

Author_Institution

Lab. of Semicond. Mater. Sci., Acad. Sinica, Beijing, China

fYear

2000

fDate

2000

Firstpage

205

Lastpage

208

Abstract

Self-assembled InAs quantum wires (QWRs) embedded in In_0.52Al_0.48As, In_0.53Ga_0.47As, and (In _0.52Al_0.48As)₂/(In_0.53Ga _0.47As)₂-short -period-lattice matrices on InP (001) were fabricated with molecular beam epitaxy (MBE). These QWR lines are along [110], ×4 direction in the 2×4 reconstructed (001) surface as revealed with high energy electron diffraction (RHEED). Alignment of quantum wires in a multilayer structure depends on the composition of spacer layers

Keywords

III-V semiconductors; indium compounds; interface structure; molecular beam epitaxial growth; reflection high energy electron diffraction; self-assembly; semiconductor growth; semiconductor quantum wires; semiconductor superlattices; surface reconstruction; (In_0.52Al_0.48As)/(In_0.53Ga _0.47As)-short-period -lattice matrices; 2×4 reconstructed (001) surface; In_0.52Al_0.48As; In_0.53Ga_0.47As; InAs; InP; InP(001); MBE; RHEED; alignment; composition; high energy electron diffraction; molecular beam epitaxy; multilayer structure; quantum wires; self-assembled InAs quantum wires; spacer layers; Fabrication; Indium compounds; Indium phosphide; Molecular beam epitaxial growth; Nonhomogeneous media; Quantum dots; Semiconductor films; Substrates; Temperature; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939227

Filename

939227