DocumentCode
3319931
Title
Study of optical and electrical properties of GaSb/AlxGa 1-xSb grown by MOCVD
Author
Ramelan, A.H. ; Drozdowicz-Tomsia, K. ; Goldys, E.M. ; Tansley, T.L.
Author_Institution
Semicond. Sci. & Technol. Labs., Macquarie Univ., North Ryde, NSW, Australia
fYear
2000
fDate
2000
Firstpage
209
Lastpage
212
Abstract
We report the metalorganic chemical vapour deposition (MOCVD) growth conditions and properties of GaSb and AlxGa1-x Sb in the regime x⩽0.25, including the effect of V/III ratio and growth temperature on electrical and optical properties. GaSb and Al xGa1-xSb compound layers were grown on GaAs substrate using TMAl, TMGa and TMSb precursors. Growth temperatures in the range of 520°C to 680°C and V/III ratios between 1 to 5 have been investigated
Keywords
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; hole density; hole mobility; photoluminescence; semiconductor growth; semiconductor heterojunctions; stoichiometry; vapour phase epitaxial growth; 520 to 680 C; GaAs substrate; GaSb-AlGaSb; GaSb/AlxGa1-xSb; MOCVD; PL; TMAl; TMGa; TMSb precursors; V/III ratio; electrical properties; growth temperature; hole density; metalorganic chemical vapour deposition; mobility; optical properties; Australia; Chemical technology; Chemical vapor deposition; Epitaxial growth; High speed optical techniques; III-V semiconductor materials; Laboratories; MOCVD; Molecular beam epitaxial growth; Optical materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location
Canberra, ACT
Print_ISBN
0-7803-5814-7
Type
conf
DOI
10.1109/SIM.2000.939228
Filename
939228
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