Title :
Transmission electron microscopy investigation of semiconductor quantum dots
Author :
Liao, X.Z. ; Zou, J. ; Cockayne, D.J.H.
Author_Institution :
Australian Key Centre for Microscopy & Microanal., Sydney Univ., NSW, Australia
Abstract :
Transmission electron microscopy was used to study InGaAs/GaAs and Ge(Si)/Si quantum dots. Results on the detailed microstructural investigation using plan-view [001] zone-axis bright-field diffraction contrast imaging technique combined with image simulations are presented
Keywords :
III-V semiconductors; crystal microstructure; elemental semiconductors; gallium arsenide; germanium; indium compounds; interface structure; semiconductor quantum dots; silicon; transmission electron microscopy; Ge(Si)/Si quantum dots; Ge:Si-Si; InGaAs-GaAs; InGaAs/GaAs; image simulation; microstructural investigation; plan-view [001] zone-axis bright-field diffraction contrast imaging; semiconductor quantum dots; transmission electron microscopy; Capacitive sensors; Data mining; Diffraction; Finite element methods; Gallium arsenide; Image analysis; Quantum dots; Shape; Transmission electron microscopy; US Department of Transportation;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939230
