Interfacial coherence and lateral indium segregation in thick InGaAs single heterostructures grown on GaAs substrates

Author

Absin, R. ; Madebo, M. ; Warminski, T. ; Usher, B.

Author_Institution

Dept. of Electron. Eng., La Trobe Univ., Bundoora, Vic., Australia

fYear

2000

fDate

2000

Firstpage

240

Lastpage

243

Abstract

Interfacial coherence in low-strained In_xGa_1-xAs grown on GaAs substrates has been studied and the critical strains corresponding to layer thicknesses of 0.5, 1.0, and 2.0 μm have been determined. The measured critical strains exceeded those expected from current theoretical models and the discrepancy could not be accounted for by including additional dislocation pinning due to either a Peierls force or a dislocation atmosphere. A new model of Lateral Indium Segregation (LIS) in the vicinity of a grown-in threading dislocation is proposed as an alternative explanation of our observations

Keywords

III-V semiconductors; dislocation pinning; gallium arsenide; indium compounds; interface structure; internal stresses; semiconductor heterojunctions; surface segregation; 0.5 mum; 1 mum; 2 mum; GaAs; GaAs substrates; In_xGa_1-xAs; InGaAs-GaAs; Peierls force; critical strains; dislocation atmosphere; dislocation pinning; grown-in threading dislocation; interfacial coherence; lateral indium segregation; layer thickness; thick InGaAs single heterostructures; Atmosphere; Atmospheric measurements; Atmospheric modeling; Capacitive sensors; Coherence; Current measurement; Force measurement; Gallium arsenide; Indium; Strain measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939235

Filename

939235