The influence of delta-doped sheet position on the optical properties of InGaAs/GaAs single quantum wells

Author

Dao, L.V. ; Gal, M. ; Li, G. ; Jagadisho, C.

Author_Institution

Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia

fYear

2000

fDate

2000

Firstpage

268

Lastpage

271

Abstract

We found that the time integrated (CW) and time resolved photo-luminescence (PL) spectra of Si δ-doped In_0.2Ga _0.8As/GaAs quantum wells (QW´s) depended significantly on the position of the doping sheet. Using time resolved PL we measured the various relaxation times into and out of the well and found strong correlation between the position of the doping sheet and the values of the relaxation times

Keywords

III-V semiconductors; carrier relaxation time; doping profiles; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum wells; silicon; time resolved spectra; In_0.2Ga_0.8As:Si-GaAs; InGaAs/GaAs single quantum wells; PL spectra; Si δ-doped In_0.2Ga_0.8As/GaAs quantum well; delta-doped sheet position; optical properties; relaxation times; time integrated photoluminescence; time resolved PL; time resolved photoluminescence; Australia; Gallium arsenide; Indium gallium arsenide; Laser excitation; Optical scattering; Particle scattering; Physics; Semiconductor device doping; Surface emitting lasers; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939241

Filename

939241