• DocumentCode
    332033
  • Title

    Physics based analytical model for charge storage in an ideal heterostructure barrier varactor

  • Author

    Adamski, Miroslaw E. ; Dobrowolski, Janusz A.

  • Author_Institution
    Inst. of Electron. Fundamentals, Warsaw Univ. of Technol., Poland
  • fYear
    1998
  • fDate
    20-22 May 1998
  • Firstpage
    251
  • Abstract
    An ideal Heterostructure Barrier Varactor (HBV) is defined as a device with no leakage current. Space charge storage in the cladding regions with uniformly doped modulation layers and undoped spacers is analyzed using the Thomas-Fermi equilibrium model and Joyce-Dixon approximation. The resulting Q-V characteristics of the cladding regions are given in closed-form parametric expressions, with the electron concentration as the independent variable. C-V characteristics of the HBV is also given parametrically with charge as the device state variable. The calculated C-V characteristics are in excellent agreement with the measured data
  • Keywords
    semiconductor device models; space charge; submillimetre wave diodes; varactors; C-V characteristics; Joyce-Dixon approximation; Q-V characteristics; THF; Thomas-Fermi equilibrium model; charge storage; cladding regions; closed-form parametric expressions; device state variable; electron concentration; heterostructure barrier varactor; physics based analytical model; undoped spacers; uniformly doped modulation layers; Analytical models; Capacitance-voltage characteristics; Circuits; Electrons; Frequency conversion; Leakage current; Physics; Semiconductor devices; Space charge; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwaves and Radar, 1998. MIKON '98., 12th International Conference on
  • Conference_Location
    Krakow
  • Print_ISBN
    83-906662-0-0
  • Type

    conf

  • DOI
    10.1109/MIKON.1998.737957
  • Filename
    737957