Title :
Analysis of trap-related kink dynamics in GaAs MESFETs
Author :
Horio, K. ; Wakabayashi, A. ; Mitani, Y.
Author_Institution :
Fac. of Syst. Eng., Shibaura Inst. of Technol., Omiya, Japan
Abstract :
Effects of surface states and substrate traps on the “kink” (an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by 2-D analysis. It is shown that the kink could also arise due to the surface-state effects: impact ionization of holes and the following hole trapping by the surface states. Transient or dynamic simulation indicates that the trap-related kink phenomena ate rather slow processes with long response times
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; hole traps; impact ionisation; semiconductor device models; surface states; 2-D analysis; GaAs; GaAs MESFETs; hole trapping; impact ionization; long response times; substrate traps; surface states; trap-related kink dynamics; Electron traps; Energy states; Gallium arsenide; Impact ionization; MESFETs; Poisson equations; Steady-state; Surface treatment; Systems engineering and theory; Voltage;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939256