DocumentCode :
3322278
Title :
Use of surface sensitive analysis techniques for the study of silicide processes in power transistors: platinum silicide formation as an example
Author :
Kraft, Daniel ; Ganitzer, Paul ; Kohler-Redlich, Philipp ; Scheithauer, Uwe
Author_Institution :
Infineon Technol. Austria AG, Villach
fYear :
2005
fDate :
11-12 April 2005
Firstpage :
217
Lastpage :
222
Abstract :
This study demonstrates how to gain a fundamental understanding of semiconductor unit processes using surface sensitive analysis techniques. Silicide processes are presently widely-used in power transistor technology. Therefore, the platinum silicide formation has been examined systematically. Besides this technological aspect it is also shown that X-ray induced photoelectron spectroscopy (XPS) in combination with other surface sensitive methods are powerful tools which can be adjuvant for industrial questions as well
Keywords :
X-ray photoelectron spectra; power transistors; semiconductor device manufacture; semiconductor device metallisation; X-ray induced photoelectron spectroscopy; XPS; platinum silicide formation; power transistor technology; semiconductor unit processes; silicide processes; surface sensitive analysis techniques; Chemical analysis; Information analysis; Platinum; Power transistors; Silicides; Spectroscopy; Sputter etching; Sputtering; Temperature; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 2005 IEEE/SEMI
Conference_Location :
Munich
Print_ISBN :
0-7803-8997-2
Type :
conf
DOI :
10.1109/ASMC.2005.1438798
Filename :
1438798
Link To Document :
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