Title :
CMOS RF ICs for 900 MHz-2.4 GHz band wireless communication networks
Author :
Madihian, M. ; Desclos, L. ; Drenski, T. ; Kinoshita, Y. ; Fujii, H. ; Yamazaki, T.
Author_Institution :
C&C Media Res. Labs., NEC Corp., Kawasaki, Japan
Abstract :
The present paper concerns with the design consideration and performance results for a series of CMOS RF ICs for 900 MHz-2.4 GHz wireless access front-end application. Developed ICs include an antenna switch, RF amplifier, down- and up-mixers, IF amplifier, driver amplifier, as well as transceiver chips incorporating these ICs using a 0.25 μm CMOS process. These ICs operate with a supply voltage higher than 4 V and a current of 2-4 mA per transistor. Without utilizing any off-chip matching, a transceiver chip possesses down- and up-conversion gains higher than 40 dB, 32 dB, and 25 dB, at 900 MHz, 1.9 GHz, and 2.4 GHz, respectively, representing applicability of CMOS technology for the 900 MHz-2.4 GHz frequency band
Keywords :
CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; UHF mixers; field effect transistor switches; intermediate-frequency amplifiers; radio access networks; transceivers; 0.25 micron; 2 to 4 mA; 25 to 40 dB; 4 V; 900 MHz to 2.4 GHz; CMOS RF ICs; IF amplifier; RF amplifier; antenna switch; down-mixers; driver amplifier; transceiver chips; up-mixers; wireless access front-end application; wireless communication networks; CMOS process; CMOS technology; Communication switching; Driver circuits; Radio frequency; Radiofrequency amplifiers; Switches; Transceivers; Voltage; Wireless communication;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-5604-7
DOI :
10.1109/RFIC.1999.805229
