Title :
Ku-band Si MOSFET monolithic amplifiers with low-loss on-chip matching networks
Author :
Yano, Hitoshi ; Nakahara, Yasushi ; Hirayama, Tomohisa ; Matsuno, Noriaki ; Suzuki, Yasuyuki ; Furukawa, Akio
Author_Institution :
Optoelectron. & High Frequency Device Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
We have demonstrated Ku-band (12-20 GHz) Si MOSFET monolithic amplifiers with on-chip matching networks. In these amplifiers, we used 3-μm-thick Al-metal transmission lines on 6-μm-thick polyimide/SiON isolation layers for the matching networks. The MOSFET amplifiers demonstrated a gain of 10 dB at about 23 GHz, the highest gain yet reported for this frequency. The bandwidth was as high as 25 GHz, which is close to fmax/2 of the MOSFETs. Therefore, the on-chip matching networks could provide high performance up to the Ku-band
Keywords :
MMIC amplifiers; MOSFET circuits; elemental semiconductors; impedance matching; silicon; 10 dB; 23 GHz; 25 GHz; Al metal transmission line; Ku-band; Si; Si MOSFET monolithic amplifier; bandwidth; gain; on-chip matching network; polyimide/SiON isolation layer; Artificial intelligence; CMOS logic circuits; Equivalent circuits; Frequency; Large scale integration; MOSFET circuits; Network-on-a-chip; Polyimides; System-on-a-chip; Transmission lines;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-5604-7
DOI :
10.1109/RFIC.1999.805253
