Title :
A novel high-Q inductor based on Si 3D MMIC technology and its application
Author :
Kamogawa, Kenji ; Nishikawa, Kenjiro ; Tokumitsu, Tsuneo ; Tanaka, Masayoshi
Author_Institution :
NTT Network Innovation Labs., Kanagawa, Japan
Abstract :
A novel high-Q spiral inductor, implemented on a conductive Si wafer by applying the 3D MMIC structure over it, is proposed. The proposed inductor effectively uses a 10 μm thick polyimide layers and ground plane with a window below the spiral. A Q-factor of 21.7 at 1.88 nH and 5.8 GHz is achieved. A 5 GHz-band LNA is also designed with the new inductors and Si BJT with fmax of 24 GHz, and the highest-class of performance was predicted with a 20 dB gain and a 2.5 dB noise figure
Keywords :
MMIC amplifiers; bipolar MMIC; elemental semiconductors; equivalent circuits; inductors; integrated circuit technology; polymer films; silicon; 10 micron; 2.5 dB; 20 dB; 24 GHz; 5 to 5.8 GHz; SHF LNA; Si; Si 3D MMIC technology; conductive Si wafer; high-Q inductor; polyimide layers; spiral inductor; Dielectric substrates; Digital integrated circuits; Gold; Inductors; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Parasitic capacitance; Polyimides; Spirals;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-5604-7
DOI :
10.1109/RFIC.1999.805267
