• DocumentCode
    3325548
  • Title

    Numerical characterization of a TEM-t cell as evaluation case of field solvers

  • Author

    De Smedt, R. ; Franchois, A. ; Pourtau, J.C. ; Cottevieille, D. ; Mader, T.

  • Author_Institution
    Alcatel Bell Telephone, Antwerp, Belgium
  • fYear
    195
  • fDate
    14-18 Aug 195
  • Firstpage
    217
  • Lastpage
    221
  • Abstract
    By measuring the transmission loss in a TEM-t cell the conductivity of thin materials used in shielding can be determined over a large frequency range. The behavior of the empty and loaded cell is simulated numerically by using 2D and 3D field solvers. Static solvers are used to establish an equivalent circuit model of the cell: the line parameters of the straight section with static 2D solvers, the equivalent circuit of the interrupted inner conductor with a static 3D solver. Dynamic 3D solvers accurately simulate the electromagnetic behavior of a complete cell, including coax to taper transition, tapered section, interrupted inner conductor, Teflon supports and thin conductive material. The numerical results are confirmed by measurements
  • Keywords
    electrical conductivity measurement; electromagnetic fields; electromagnetic shielding; electromagnetic wave transmission; equivalent circuits; nondestructive testing; test equipment; 2D field solvers; 3D field solver; TEM-t cell; Teflon supports; coax to taper transition; conductivity; empty cell; equivalent circuit model; evaluation case; field solvers; interrupted inner conductor; line parameters; loaded cell; numerical characterization; straight section; tapered section; thin conductive material; thin materials; transmission loss; Circuit simulation; Coaxial components; Conducting materials; Conductivity measurement; Electromagnetic measurements; Equivalent circuits; Frequency measurement; Loss measurement; Numerical simulation; Propagation losses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electromagnetic Compatibility, 1995. Symposium Record., 1995 IEEE International Symposium on
  • Conference_Location
    Atlanta, GA
  • Print_ISBN
    0-7803-3608-9
  • Type

    conf

  • DOI
    10.1109/ISEMC.1995.523550
  • Filename
    523550