CMOS compatible edge coupled capacitive MEMS switch for RF applications

Author

Zhang, Shumin ; Su, Wansheng ; Zaghloul, Mona E.

Author_Institution

Hughes Commun., Germantown, MD

fYear

2007

fDate

29-31 Dec. 2007

Firstpage

193

Lastpage

196

Abstract

This paper presents the design, simulation and fabrication of a CMOS process compatible capacitive MEMS switch. The MEMS switch uses thermal actuation and finger structures for capacitive coupling. The design is fabricated using commercial 0.6 um CMOS process and post-processed using mask-less RIE process. Results show that the insertion loss is 0.7 dB at 2 GHz and the isolation is 30 dB at 2 GHz. The actuation voltage is 1.5v. The switch demonstrates high isolation and low insertion loss, it well fits for RF applications like configurable voltage control oscillators and configurable matching networks.

Keywords

CMOS integrated circuits; UHF integrated circuits; micromechanical devices; voltage-controlled oscillators; CMOS process; RF applications; capacitive coupling; compatible capacitive MEMS switch; configurable matching networks; frequency 2 GHz; loss 0.7 dB; loss 30 dB; size 0.6 mum; thermal actuation; voltage 1.5 V; voltage control oscillators; CMOS process; Dielectric substrates; Fabrication; Fingers; Insertion loss; Microswitches; Radio frequency; Radiofrequency microelectromechanical systems; Switches; Thermal stresses; CMOS; MEMS Switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2007. ICM 2007. Internatonal Conference on

Conference_Location

Cairo

Print_ISBN

978-1-4244-1846-6

Electronic_ISBN

978-1-4244-1847-3

Type

conf

DOI

10.1109/ICM.2007.4497691

Filename

4497691