Gated carbon nanotube emitters grown on silicon trench wells with a sidewall spacer for stable vacuum microwave devices

Author

Ahn, Seong-Deok ; Song, Yoon-Ho ; Choi, Sung-Yool ; PARK, Jong-Bong ; Sohn, Jung-Inn ; Lee, Seong-Hoon ; Lee, Jin Ho ; Cho, Kyung-Ik

Author_Institution

Micro-Electronics Technol. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

fYear

2001

fDate

2001

Firstpage

55

Lastpage

56

Abstract

We present the gated carbon nanotubes (CNTs) emitters grown on silicon trench wells with a sidewall spacer for the application of vacuum microwave devices. The side wall spacer enables us to fabricate a highly stable gated CNT emitter. The developed CNT emitter can be. applicable. to the pre-bunched electron beam sources for microwave amplifier tubes

Keywords

carbon nanotubes; electron field emission; electron sources; microwave amplifiers; microwave tubes; vacuum microelectronics; C; Si; gated carbon nanotube field emitter; microwave amplifier tube; pre-bunched electron beam source; sidewall spacer; silicon trench well; vacuum microwave device; Carbon nanotubes; Chemical vapor deposition; Fabrication; Iron; Materials science and technology; Microwave devices; Microwave technology; Silicon; Substrates; Vacuum technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International

Conference_Location

Davis, CA

Print_ISBN

0-7803-7197-6

Type

conf

DOI

10.1109/IVMC.2001.939650

Filename

939650