DocumentCode
3326971
Title
Biasing technique for reduced process and temperature variations of high speed, low power switched capacitor circuits
Author
George, Botros ; Dessouky, Mohamed ; Haddara, Hisham
Author_Institution
Smart Wireless Syst., Cairo
fYear
2007
fDate
29-31 Dec. 2007
Firstpage
337
Lastpage
340
Abstract
A biasing technique that minimizes the process and temperature variations of the slew rate and the gain bandwidth product of the amplifiers at the core of any switched capacitor circuit is presented. It is based on using a switched capacitor current reference coupled with weak inversion biasing of the input differential pair of the amplifier. A minimum value for the inversion coefficient that maximizes the transconductance efficiency without compromising the parasitic capacitance at the amplifier´s input is analytically derived. The proposed biasing circuit is analyzed and designed using a 130 nm CMOS process. The performance was verified by simulations with a high speed telescopic OTA.
Keywords
CMOS integrated circuits; amplifiers; switched capacitor networks; switching circuits; CMOS process; amplifier; biasing circuit; gain bandwidth product; inversion coefficient; size 130 nm; slew rate; switched capacitor circuit; temperature variation; transconductance efficiency; Bandwidth; CMOS process; Circuit analysis; Circuit simulation; Coupling circuits; Differential amplifiers; Parasitic capacitance; Switched capacitor circuits; Temperature; Transconductance; constant slew rate; weak inversion;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2007. ICM 2007. Internatonal Conference on
Conference_Location
Cairo
Print_ISBN
978-1-4244-1846-6
Electronic_ISBN
978-1-4244-1847-3
Type
conf
DOI
10.1109/ICM.2007.4497724
Filename
4497724
Link To Document