• DocumentCode
    3326971
  • Title

    Biasing technique for reduced process and temperature variations of high speed, low power switched capacitor circuits

  • Author

    George, Botros ; Dessouky, Mohamed ; Haddara, Hisham

  • Author_Institution
    Smart Wireless Syst., Cairo
  • fYear
    2007
  • fDate
    29-31 Dec. 2007
  • Firstpage
    337
  • Lastpage
    340
  • Abstract
    A biasing technique that minimizes the process and temperature variations of the slew rate and the gain bandwidth product of the amplifiers at the core of any switched capacitor circuit is presented. It is based on using a switched capacitor current reference coupled with weak inversion biasing of the input differential pair of the amplifier. A minimum value for the inversion coefficient that maximizes the transconductance efficiency without compromising the parasitic capacitance at the amplifier´s input is analytically derived. The proposed biasing circuit is analyzed and designed using a 130 nm CMOS process. The performance was verified by simulations with a high speed telescopic OTA.
  • Keywords
    CMOS integrated circuits; amplifiers; switched capacitor networks; switching circuits; CMOS process; amplifier; biasing circuit; gain bandwidth product; inversion coefficient; size 130 nm; slew rate; switched capacitor circuit; temperature variation; transconductance efficiency; Bandwidth; CMOS process; Circuit analysis; Circuit simulation; Coupling circuits; Differential amplifiers; Parasitic capacitance; Switched capacitor circuits; Temperature; Transconductance; constant slew rate; weak inversion;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2007. ICM 2007. Internatonal Conference on
  • Conference_Location
    Cairo
  • Print_ISBN
    978-1-4244-1846-6
  • Electronic_ISBN
    978-1-4244-1847-3
  • Type

    conf

  • DOI
    10.1109/ICM.2007.4497724
  • Filename
    4497724