Title :
Low turn-on voltage silicon field emitter arrays with atomically sharp tips
Author :
Ding, Meng ; Akinwande, Akintunde I.
Author_Institution :
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
Abstract :
We report the demonstration of 1 μm gate-aperture silicon field emission arrays with turn-on voltages as low as 14 V. The low turn-on voltage is attributed to the atomically sharp emitter tip whose radius of curvature could be less than 1 nm. The atomically sharp tips were obtained by isotropic etch of silicon and an optimized procedure for low temperature oxidation sharpening
Keywords :
electron field emission; elemental semiconductors; etching; oxidation; silicon; vacuum microelectronics; 1 micron; 14 V; Si; atomically sharp tip; gate-aperture silicon field emission array; isotropic etching; low-temperature oxidation sharpening; process optimization; radius of curvature; turn-on voltage; Apertures; Atomic measurements; Electron emission; Etching; Field emitter arrays; Low voltage; Microelectronics; Oxidation; Silicon; Temperature;
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
DOI :
10.1109/IVMC.2001.939679
