Title :
Fabrication of Si FEA integrated with MOSFET driving circuits
Author :
Nagao, M. ; Tokunaga, K. ; Tamura, Y. ; Matsukawa, T. ; Kanemaru, S. ; Itoh, J.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
The fabrication process of the Si field emitter array (FEA) integrated with the driving circuits was developed. FEAs, emission controlling MOSFETs and simple logic circuits to drive the FEAs are integrated on a chip for the next generation FED
Keywords :
MOSFET circuits; driver circuits; electron field emission; elemental semiconductors; silicon; vacuum microelectronics; FED; MOSFET driving circuit; Si; Si field emitter array; fabrication; logic circuit; Circuit stability; Electrodes; Fabrication; Field emitter arrays; Integrated circuit technology; Logic circuits; MOSFET circuits; Oxidation; Textile industry; Voltage control;
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
DOI :
10.1109/IVMC.2001.939701
