Field emission display using self-aligned carbon nanotube field emitters

Author

Chung, D.S. ; Park, S.H. ; Jin, Y.W. ; Jung, J.E. ; Park, Y.J. ; Lee, H.W. ; Ko, T.Y. ; Hwang, S.Y. ; Kim, J.W. ; Kwon, N.H. ; Yoon, M.H. ; Lee, C.G. ; You, J.H. ; Lee, N.S. ; Kim, J.M.

Author_Institution

Samsung Adv. Inst. of Technol., Suwon, South Korea

fYear

2001

fDate

2001

Firstpage

179

Lastpage

180

Abstract

We have obtained uniform field emission quality in a 5" active area by applying gate bias of 75 V, and the brightness is about 240 cd/cm² under an anode bias voltage of 1.5 kV. The triode structure is fabricated by normal thin film processing and carbon nanotube tips are made by the screen printing method and photolithography. The low driving voltage property and the self-aligned thick film process of carbon nanotubes have strong potential for future emissive display development

Keywords

brightness; carbon nanotubes; field emission displays; photolithography; thick films; triodes; 1.5 kV; 75 V; C; active area; anode bias voltage; brightness; carbon nanotube tips; driving voltage; emissive display development; field emission display; gate bias; photolithography; screen printing method; self-aligned carbon nanotube field emitters; self-aligned thick film process; thin film process; triode structure; uniform field emission quality; Anodes; Brightness; Carbon nanotubes; Electrodes; Electron emission; Flat panel displays; Lithography; Low voltage; Thick films; Vehicles;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International

Conference_Location

Davis, CA

Print_ISBN

0-7803-7197-6

Type

conf

DOI

10.1109/IVMC.2001.939712

Filename

939712