Title :
Influence of gas source supply interruption on quantum well structure of few monolayer InP/In0.53Ga0.47As/InP grown by OMVPE
Author :
Pecharapa, W. ; Techitdheera, W. ; Nukeaw, J.
Author_Institution :
Fac. of Sci., King Mongkut´´s Inst. of Technol., Bangkok, Thailand
Abstract :
A model of asymmetric stepped quantum well affected by gas source supply interruption at the interface of extremely thin InP/In0.53Ga0.47As/InP single quantum well grown by organometallic vapor phase epitaxy (OMVPE) is developed. The energy levels in the well and the intersubband transition energies are carried out and compared to experimental data from photoreflectance spectroscopy.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoreflectance; semiconductor growth; semiconductor quantum wells; InP-In0.53Ga0.47As-InP; OMVPE; energy levels; gas source supply interruption; intersubband transition energies; organometallic vapor phase epitaxy; photoreflectance spectroscopy; quantum well structure; semiconductor quantum well; Energy states; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Optical sensors; Quantum well lasers; Semiconductor lasers; Spectroscopy; Substrates; Time of arrival estimation;
Conference_Titel :
Industrial Technology, 2002. IEEE ICIT '02. 2002 IEEE International Conference on
Print_ISBN :
0-7803-7657-9
DOI :
10.1109/ICIT.2002.1189379
