• DocumentCode
    3328583
  • Title

    Characteristics of phosphorus implanted MPCVD diamond films

  • Author

    Lee, Jong Duk ; Cho, Euo Sik ; Park, Byung-Gook ; Kwon, Sang Jik

  • Author_Institution
    ISRC & Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    281
  • Lastpage
    282
  • Abstract
    Phosphorus ions were implanted on MPCVD (microwave plasma chemical vapor deposition) diamond films in various growth steps and the films were electrically characterized. When diamond films were grown after implantation, improved electrical characteristics were obtained. The results show that phosphorus ions on the Si-diamond interface have an influence on field emission from diamond
  • Keywords
    diamond; doping profiles; field emission; ion implantation; phosphorus; plasma CVD; plasma radiofrequency heating; C:P-Si; P implantation; Si-diamond interface; diamond films; electrical characteristics; field emission; growth steps; microwave plasma chemical vapor deposition; phosphorus implanted MPCVD diamond films; phosphorus ions; Anodes; Chemical vapor deposition; Doping; Electric variables; Electron emission; Impurities; Plasma chemistry; Plasma immersion ion implantation; Plasma properties; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
  • Conference_Location
    Davis, CA
  • Print_ISBN
    0-7803-7197-6
  • Type

    conf

  • DOI
    10.1109/IVMC.2001.939763
  • Filename
    939763
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3328583