DocumentCode :
3328798
Title :
Electronic Structure of InAs/InP Elliptical Quantum Wires
Author :
Duan Xiu-Zhi ; Wang Guang-Xin ; Liu De ; Gou Bing-Ping
Author_Institution :
Coll. of Light Ind., Hebei United Univ., Tangshan, China
fYear :
2011
fDate :
16-18 May 2011
Firstpage :
1
Lastpage :
3
Abstract :
The problem of electron levels in InAs/InP elliptical quantum wires (QWRs) is investigated in detail by using the effective mass approximation and the diagonalization method. In cases of both the absence and presence of a magnetic field the electron states are given as functions of the ellipticity and parameter. The calculations show that the energy levels in elliptical quantum wires are dramatically influenced by the shape of the wires and the energy decreases as the eccentricity increasing when the parameter is fixed, and decreases as the parameter increasing when the ellipticity is fixed. The quantum behaviors of elliptical quantum wires are similar to that of other shaped QWRs which were studied before.
Keywords :
III-V semiconductors; band structure; effective mass; indium compounds; semiconductor quantum wires; InAs-InP; diagonalization method; eccentricity; effective mass approximation; electron levels; electron states; electronic stucture; elliptical quantum wires; energy levels; Electric potential; Excitons; Indium phosphide; Magnetic confinement; Magnetic fields; Quantum mechanics; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2011 Symposium on
Conference_Location :
Wuhan
ISSN :
2156-8464
Print_ISBN :
978-1-4244-6555-2
Type :
conf
DOI :
10.1109/SOPO.2011.5780629
Filename :
5780629
Link To Document :
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