Interstrip characteristics of n-on-p FZ silicon detectors

Author

Lindgren, S. ; Betancourt, C. ; Chilingarov, A. ; Dawson, N. ; Fadeyev, V. ; Fox, H. ; Hara, K. ; Hatano, H. ; Kohriki, T. ; Ikegami, Y. ; Mitsui, S. ; Sadrozinski, H.F.-W. ; Terada, S. ; Unno, Y. ; Wright, J. ; Yamada, M.

Author_Institution

SCIPP, UC Santa Cruz, Santa Cruz, CA, USA

fYear

2009

fDate

Oct. 24 2009-Nov. 1 2009

Firstpage

157

Lastpage

162

Abstract

We report on the measurement of interstrip parameters of p-type silicon strip sensors which we are developing in a large collaboration to be used in a future tracker for the LHC upgrade. We measure on test structures with about 1 cm long strips the interstrip resistance, interstrip capacitance (at 1 MHz) and punch-through protection both pre-rad and after irradiation with 70 MeV protons to a fluence of 1.5Ã—10¹³ p/cm², corresponding to about 1 MRad, from prototyping runs with Hamamatsu Photonics and Micron Semiconductors. We report the values for a variety of isolation scenarios of p-stops, p-spray and a combination of both.

Keywords

particle track visualisation; silicon radiation detectors; Hamamatsu photonics; LHC upgrade; interstrip capacitance; interstrip characteristics; interstrip resistance; micron semiconductors; n-on-p FZ silicon detectors; p-type silicon strip sensors; punch-through protection; radiation-hard tracking detectors; Capacitance measurement; Collaboration; Detectors; Electrical resistance measurement; Large Hadron Collider; Protection; Semiconductor device testing; Sensor phenomena and characterization; Silicon; Strips;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE

Conference_Location

Orlando, FL

ISSN

1095-7863

Print_ISBN

978-1-4244-3961-4

Electronic_ISBN

1095-7863

Type

conf

DOI

10.1109/NSSMIC.2009.5401828

Filename

5401828