• DocumentCode
    3329480
  • Title

    GaN microwave electronics

  • Author

    Mishra, U.K. ; Wu, Y.F. ; Keller, B.P. ; Keller, S. ; DenBaars, S.P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • fYear
    1997
  • fDate
    7-8 Jul 1997
  • Firstpage
    35
  • Lastpage
    39
  • Abstract
    The progress of AlGaN/GaN based HEMTs is reviewed. The mobility achieved in these modulation doped structures is over 1500 cm2 V-1 s-1 at 300 K with sheet densities of over 1×1013 cm-2. Ft of over 50 GHz and fmax of over 90 GHz has been demonstrated. Power density of over 2.6 W/mm at 10 GHz has been achieved
  • Keywords
    III-V semiconductors; aluminium compounds; carrier mobility; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; 10 GHz; 300 K; AlGaN-GaN; HEMTs; III-V semiconductors; microwave electronics; mobility; modulation doped structures; power density; sheet densities; Aluminum gallium nitride; Consumer electronics; Costs; Crystalline materials; Electron mobility; Gallium nitride; HEMTs; MODFETs; Microwave devices; Photonic band gap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Millimeter Waves, 1997 Topical Symposium on
  • Conference_Location
    Kanagawa
  • Print_ISBN
    0-7803-3887-1
  • Type

    conf

  • DOI
    10.1109/TSMW.1997.702439
  • Filename
    702439
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3329480