Pulsed ion beam evaporation at low temperature for the preparation of thin films

Author

Yatsui, K. ; Suematsu, H. ; Yang, S.C. ; Iwashita, R. ; Nagahama, T. ; Uchitomi, N. ; Jiang, W. ; Arikado, T.

Author_Institution

Extreme Energy-Density Res. Inst., Nagaoka, Japan

fYear

2002

fDate

30 June-3 July 2002

Firstpage

540

Lastpage

543

Abstract

Using high-density ablation plasma produced by pulsed ion beam interaction with solid targets, it has been demonstrated by the present authors to prepare thin films at low temperature, which was called ion beam evaporation. In addition to the first preparation of ZnS in 1988, the preparation of many films has been succeeded such as YBCO, (SrBa)TiO₃, SrAl₂O₄:Eu, poly-Si, ITO, and apatite. Since some of them have been already reported elsewhere, some other new results of the preparation of thin films by IBE are presented such as Si-Ge or HfO₂.

Keywords

Ge-Si alloys; hafnium compounds; ion beam assisted deposition; plasma deposition; thin films; vacuum deposition; HfO₂; Si-Ge; high-density ablation plasma; low temperature; pulsed ion beam evaporation; solid targets; thin films preparation; Chemical vapor deposition; Dielectric thin films; Ion beams; Plasma temperature; Semiconductor films; Semiconductor thin films; Silicon; Solids; Substrates; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. Conference Record of the Twenty-Fifth International

ISSN

1076-8467

Print_ISBN

0-7803-7540-8

Type

conf

DOI

10.1109/MODSYM.2002.1189535

Filename

1189535