Title :
Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting
Abstract :
The following topics are covered: SiGe HBT scaling issues and lateral bipolar devices; radio circuits; high frequency and behavioural modelling; power devices; process control and integration; analog circuits; electrothermal simulation and characterisation; RF and mixed-mode process technology; high-speed bipolar for RF and microwave applications; VCOs and gyrators; advanced process and device technology; A/D and D/A converters; and power electronics
Keywords :
BiCMOS integrated circuits; bipolar integrated circuits; heterojunction bipolar transistors; integrated circuit modelling; integrated circuit technology; power electronics; A/D converters; ADC; BiCMOS ICs; D/A converters; DAC; HBT scaling; RF applications; SiGe; VCO; analog circuits; behavioural modelling; bipolar ICs; characterisation; electrothermal simulation; gyrators; high frequency modelling; high-speed bipolar circuits; lateral bipolar devices; microwave applications; mixed-mode process technology; power electronics; process control; radio circuits;
Conference_Titel :
Energy Conversion Engineering Conference, 1996. IECEC 96., Proceedings of the 31st Intersociety
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-3547-3
DOI :
10.1109/IECEC.1996.553414
