6.5 kV IGBT-modules

Author

Auerbach, Franz ; Bauer, Josef Georg ; Glantschnig, M. ; Göttert, Jürgen ; Hierholzer, Martin ; Porst, Alfred ; Reznik, Daniel ; Schulze, Hans-Joachim ; Schutze, Thomas ; Spanke, Reinhold

Author_Institution

Infineon Technol., Germany

Volume

3

fYear

1999

fDate

1999

Firstpage

1770

Abstract

Power control in applications with a line voltage of 3 kV DC and more today is managed by GTOs and IGCTs. The IGBT, a device with several advantages compared to power semiconductors in thyristor structure (low requirements regarding the driving unit, easy cooling as a result of the isolated structure) is fully developed and introduced up to a blocking voltage range of 3.3 kV. Consequently, at the moment IGBT-technology can only be used by series connection of at least two IGBT-modules in these high voltage applications. This leads to several complications in driving, controlling and isolating the modules. With the development of 6.5 kV IGBT-modules, eupec makes a power semiconductor available, which combines the advantages of IGBT-technology with the high blocking voltage capability of GTOs and IGCTs without the problems of series connection

Keywords

insulated gate bipolar transistors; modules; 6.5 kV; IGBT-modules; blocking voltage; cooling; driving unit; eupec; high blocking voltage capability; power control; power semiconductor; series connection; Circuit synthesis; Cooling; Diodes; Doping; Energy management; Insulated gate bipolar transistors; Power control; Technology management; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE

Conference_Location

Phoenix, AZ

ISSN

0197-2618

Print_ISBN

0-7803-5589-X

Type

conf

DOI

10.1109/IAS.1999.805979

Filename

805979