Title :
3rd generation of 1200 V IGBT modules
Author :
Hierholzer, M. ; Laska, Th. ; Loddenkotter, M. ; Münzer, M. ; Pfirsch, F. ; Schaffer, Chris ; Schmidt, Th.
Author_Institution :
eupec GmbH & Co. KG, Warstein, Germany
Abstract :
IGBT-modules are the most frequently used semiconductors for power applications. The markets demand for higher power integration in one module is limited by the chip losses and the housings capability to dissipate this power. With the 3rd generation of 1200 V IGBT modules eupec presents a product line with up to 50% higher current density in the same housing. In addition to familiar housings a new standard, the EconoPACK+, is introduced. So far the manufacturers had to deal with a three dimensional trade off between ruggedness, switching losses and saturation losses. Combining two technologies Infineon Technologies (formerly Siemens Semiconductors (HL)) in cooperation with eupec Warstein has designed the IGBT3 that incorporates the ruggedness of a chip with a planar cell design with the low saturation of a trench IGBT. A vertically optimized device structure lowers the saturation voltage again and what is more important, also reduces the dynamic losses. In connection with eupec´s advanced packaging technology this leads to a higher power integration without a rise of system costs due to additional protection circuits. The performance of 3rd generation IGBT modules is discussed and a new product range introduced
Keywords :
insulated gate bipolar transistors; losses; power semiconductor switches; semiconductor device packaging; 1200 V; EconoPACK+; IGBT modules; IGBT3; Infineon Technologies; advanced packaging technology; chip losses; current density; dynamic losses reduction; eupec; eupec Warstein; low saturation; planar cell design; power applications; power dissipation; ruggedness; saturation losses; saturation voltage reduction; switching losses; trench IGBT; vertically optimized device structure; Buffer layers; Costs; Current density; Insulated gate bipolar transistors; Packaging; Power semiconductor switches; Power system protection; Semiconductor device manufacture; Switching loss; Voltage;
Conference_Titel :
Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE
Conference_Location :
Phoenix, AZ
Print_ISBN :
0-7803-5589-X
DOI :
10.1109/IAS.1999.805982