• DocumentCode
    3333584
  • Title

    Energy dissipation in small-diameter Quartz Crystal Microbalance experimentally studied for ultra-high sensitive gravimetry

  • Author

    Abe, Takashi ; Li, Li ; Hung, Vu Ngoc ; Esashi, Masayoshi

  • Author_Institution
    Graduate Sch. of Eng., Tohoku Univ., Sendai, Japan
  • fYear
    2003
  • fDate
    19-23 Jan. 2003
  • Firstpage
    518
  • Lastpage
    521
  • Abstract
    In this paper, the energy dissipation in small-diameter Quartz Crystal Microbalance (QCM) was experimentally studied for ultra-high sensitive gravimetric measurements. Newly developed deep reactive ion etching technology for smooth surface glass etching was used for the fabrication of small-diameter QCM. Minimum average surface roughness is 2.3 nm for an etching with SF6/Xe (=1/1) gases and 1.8 nm for SF6/Ar (=1/4) gases at a pressure of 0.2 Pa with a self-bias voltage of -390 V. The diameters of fabricated QCM were 0.2-1.0mm and their thickness was in the range of 6-82μm. The Q-factor of the fabricated QCM increases exponentially from 2000 to 10000 as the thickness decreases due to the decrease of supporting loss. Interestingly, the increases of Q-factor deviate from simple exponential function and show a maximum peak of the Q-factor (30000).
  • Keywords
    Q-factor; microbalances; micromachining; microsensors; quartz; sputter etching; surface topography; weighing; 0.2 to 1.0 mm; 1.8 nm; 2.3 nm; 6 to 82 micron; Q-factor; SiO2; deep reactive ion etching technology; energy dissipation; minimum average surface roughness; simple exponential function; small-diameter Quartz Crystal Microbalance; smooth surface glass etching; ultra-high sensitive gravimetry; Argon; Energy dissipation; Energy measurement; Etching; Fabrication; Gases; Glass; Q factor; Rough surfaces; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-7744-3
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2003.1189800
  • Filename
    1189800