30 μm-pitch stripes of OLED patterned by stamping lift-off method

In this paper, we demonstrate 30 μm-pitch OLED (Organic Light Emitting Diode) stripes, whose cathode was patterned by a lift-off method and selectively addressable. The OLED consists of ITO (120 nm) - αNPD (70 nm)-Alq₃ (70 nm)-Al (20 nm)-Au (1 nm) layers on a glass wafer (12 mm×12 mm×0.5 mm). A 2 μm-high convex stamp of the electrode pattern was formed from a Si-wafer by dry-etching, and it was pressed on the unpatterned surface of the OLED metal layer. The unwanted metal was removed because the metal layer was adhered to the convex of the Si-stamp, and a fine cathode pattern was formed.