DocumentCode
3333725
Title
Microfabrication of gallium arsenide cantilever for atomic force microscope application
Author
Iwata, Nobuya ; Wakayama, Takayuki ; Kobayashi, Toshinari ; Yamada, Syoji
Author_Institution
Center for Nano Mater. & Technol., Japan Adv. Inst. of Sci. & Technol., Ishikawa, Japan
fYear
2003
fDate
19-23 Jan. 2003
Firstpage
550
Lastpage
553
Abstract
Recently, several researchers have reported fabrications of cantilever based on various GaAs related bulk and hetrostructure materials. But the details of fabrication processes and of mechanical properties have not yet been reported so far. In this work, we report fabrication and estimation of full GaAs cantilever for use of scanning probe microscopy. The process was accomplished only by photo-lithography and two-kind wet chemical etching. As a result, almost one third of die samples had a perfect appearance as designed. For those samples, we made resonance frequency measurement by using laser vibrometer and found a good agreement with the calculation. We also tried atomic force microscopy (AFM) observations by using this cantilever and obtained equal images to those by commercial Si cantilever.
Keywords
III-V semiconductors; atomic force microscopy; gallium arsenide; micromachining; micromechanical resonators; GaAs; GaAs cantilever; atomic force microscope application; fabrication processes; laser vibrometer; mechanical properties; microfabrication; photo-lithography; resonance frequency measurement; scanning probe microscopy; wet chemical etching; Atomic force microscopy; Chemical lasers; Chemical processes; Frequency measurement; Gallium arsenide; Mechanical factors; Optical device fabrication; Resonance; Scanning probe microscopy; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on
ISSN
1084-6999
Print_ISBN
0-7803-7744-3
Type
conf
DOI
10.1109/MEMSYS.2003.1189808
Filename
1189808
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