Si through-hole interconnections filled with Au-Sn solder by molten metal suction method

Author

Yamamoto, Satoshi ; Itoi, Kazuhisa ; Suemasu, Tatsuo ; Takizawa, Takashi

Author_Institution

Electron Device Lab., Fujikura Ltd., Tokyo, Japan

fYear

2003

fDate

19-23 Jan. 2003

Firstpage

642

Lastpage

645

Abstract

This paper deals with a fabrication method of conductive through-holes in a silicon substrate, which can be applied for micro electro-mechanical system (MEMS) devices or high-density packaging. The through-holes are formed by deep reactive ion etching (DRIE) and filled with Au-Sn solder by molten metal suction method (MMSM). The MMSM we have proposed is capable of filling high aspect ratio thorough-holes with conductive metal. We could make more than 18,000 conductive through-holes, 30 μm in diameter and 300 μm in depth, in a 4 inches sized silicon (Si) wafer. We report the principle of the filling, the fabrication processes and the structure of the through-hole interconnections.

Keywords

elemental semiconductors; gold alloys; micromechanical devices; packaging; silicon; soldering; sputter etching; tin alloys; 30 micron; 300 micron; 4 inch; Au-Sn solder; AuSn; DRIE; MEMS; Si; Si through-hole interconnections; deep reactive ion etching; high-density packaging; molten metal suction method; Chemical technology; Etching; Fabrication; Filling; Insulation; Mechanical systems; Micromechanical devices; Packaging; Silicon on insulator technology; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on

ISSN

1084-6999

Print_ISBN

0-7803-7744-3

Type

conf

DOI

10.1109/MEMSYS.2003.1189831

Filename

1189831